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 01.08.28
Features * Up to 2.7 Gb/s (FEC available) high speed operation * Clocked (MS-D/FF) or Non-clocked operation can be selected * Disable function of modulation current and bias current * Bias current monitoring * Mark density monitoring * +5 V or -5 V single power supply * Up to 60 mA p-p modulation current * Up to 50 mA bias current * Differential ECL compatible interface * On-chip 50 terminations * Internal voltage reference for AC coupling
F0522501Q
2.7 Gb/s NRZ Data Rate
Laser Diode Driver
Applications * Laser diode driver of an optical transmitter circuit up to 2.7 Gb/s (FEC available)
Functional Description The F0522501Q is a high performance GaAs laser diode driver IC applicable in an optical transmitter circuit up to 2.7 Gb/s NRZ data rate (especially suitable for SDH [STM-16] / SONET [OC-48]) , featuring the capable operation for the FEC signal. The F0522501Q specifies the rise time and the fall time of 70 ps (20 %-80 %) typically. It features the single +5 V or -5 V supply operation, the modulation current between 1 mA and 60 mA, and the bias current between 1 mA and 50 mA while the dissipating power is around the typical value of 1 W.
2.7 Gb/s Laser Diode Driver
Absolute Maximum Ratings
F0522501Q
Ta=25 C, unless specified
Parameter Supply Voltage Supply Current Input Voltage (DIN ,DINB ,CKIN ,CKINB) Input Voltage (DISIN ,SELIN) Input Voltage (VMIN ,VBIN) Output Voltage (OUT,OUTB,OUTBIAS) Output Voltage (MRK,MRKB,BM,BMB) Termination Voltage (VTTD ,VTTCK) Storage Temperature Ambient Operating Temperature Symbol VDD-VSS Icon VIN VINC1 VINC2 VOUT VOUTM VTT Tstg Ta Value - 0.5 to +7.0 250 VSS to VDD+0.5 VSS to VDD+0.5 VSS to VSS+1.5 VDD-2.0 to VDD+0.5 VSS to VDD+0.5 VDD-2.5 to VDD+0.5 -55 to +125 0 to +70 Units V mA V V V V V V C C
Recommended Operating Conditions
Parameter
Symbol Min.
Value Typ. 5.00 VDD-1.0 25 Max. 5.46 VDD 70
Units
Supply Voltage Output Voltage Ambient Operating Temperature
VDD-VSS VOUT Ta
4.75 VDD-1.6 0
V V C
2.7 Gb/s Laser Diode Driver
Electrical Characteristics
F0522501Q
Ta=25 C, VDD- VSS=4.75 to 5.46 V
Value Parameter Circuit Current (1) Input Voltage (ECL) Input Voltage (AC) Input Resistor Symbol ICKT VIH VI L VIN RI N IMMAX Modulation Peak Current(2) IMMIN IMDIS IBMAX Bias Current IBMIN IBDIS Input Voltage (SEL) VSELIH VSELIL Input Voltage (DIS) Bias Monitor Resistor Mark Density Monitor Voltage Rise Time(3) Fall Time(3) Setup Time Hold Time Maximum Clock Frequency Maximum Data Rate VDISIH VDISIL RBM
(VMRK-VMRKB)
Test Conditions Min. VMIN =VBIN=VSS Differential Input Differential Input VMIN =VSS+1.5V VMIN =VSS VDISIN=VDD-1.5V VBIN=VSS+1.5V VBIN=VSS VDISIN=VDD-1.5V Non-Clocked op. Clocked opelation Disable opelation Enable opelation VDD-1.0 VDD-1.9 0.6 60 50 VDD-1.5 VSS VDD-1.5 VSS Differential Mode Date: All "H" RL = 15 20% - 80% RL = 15 80% - 20% VSEL=OPEN or VSS to VSS+1.5V VSEL=VDD-1.5V to VDD 2.7 2.7 Typ. 100 VDD-0.9 VDD-1.7 0.8 50 OPEN OPEN 10 1.2 70 70 100 50 Max. 130 VDD-0.7 VDD-1.6 1.2 1.0 0.5 1.0 0.5 VDD VSS+1.5 VDD VSS+1.5 150 150 -
Units mA V V Vp-p mA mA mA mA mA mA V V V V V ps ps ps ps GHz
Gbps
tr tf ts th fmax fopr
(1) Excluding the input current, the modulation current and the bias current. (2) Modulation peak current is measured at "OUT" pin. (3) Rise time and fall time are measured at "OUT" pin.
2.7 Gb/s Laser Diode Driver
Block Diagram
MRK MRKB RMRK DIN VTTD DINB + Input Buffer - Vref Generator CKIN VTTCK CKINB + Input Buffer - RMRKB + OUT Mod. Circuit OUTB - ROUTB OUTBIAS VMIN Bias circuit RBM RBMO
F0522501Q
D/FF
Selector
BM BMb RBMOB
Control Circuit
SELIN DISIN
VBIN
Pin Descriptions DIN : Positive data input DINB : Negative data input VTTD : Termination for data input CKIN : Positive clock input CKINB : Negative clock input VTTCK : Termination for clock input OUT : Positive modulation output (LD should be connected to this pin.) OUTB : Negative modulation output (ROUTB=15 typ.) OUTBIAS : Bias output (RBM=10 typ., RBMO=RBMOB=3 k typ.) VMIN : Voltage input that sets the LD modulation peak current VBIN : Voltage input that sets the LD bias current DISIN : Voltage input that controls turning on/off the modulation current and the bias current SELIN : Voltage input that selects clocked or non-clocked operation BM : Bias current monitor positive output BMB : Bias current monitor negative output MRK : Mark density monitor positive output (RMRK=25 k typ.) MRKB : Mark density monitor negative output (RMRKB=25 k typ.)
2.7 Gb/s Laser Diode Driver
Function Table (1) Clocked Operation (VIN@SELIN=OPEN or VSS to VSS+1.5V) Input DIN H L QO QOB CKIN L Current@OUT ON OFF QO Output
F0522501Q
Current@OUTB OFF ON QOB
: Clock transition from low to high : Don't care : Previous current output status @OUT before clock pulse : Previous current output status @OUTB before clock pulse
(2) Non-clocked Operation (VIN@SELIN=VDD-1.5V to VDD) Input DIN H L CKIN Current@OUT ON OFF Output Current@OUTB OFF ON
2.7 Gb/s Laser Diode Driver
Pin Assignments (Top View)
F0522501Q
16
15
14
13
12
11
17 18
10 9
SUMITOMO ELECTRIC 0522501 ####
19 20
No.1 LEAD IDENTIFIER
1 2 3 4 5 6
8 7
1 2 3 4 5 6 7 8 9
:DINB :VTTD :DIN :CKIN :VTTCK :CKINB :SELIN :VDDC :VDDO
10 11 12 13 14 15 16 17 18
:BMB :BM :OUTBIAS :OUT :OUTB :DNC :VMIN :VBIN :MRKB
19 :MRK 20 :DISIN
(*) The pins without numbering should be connected to VSS. (**) VDDC and VDDO are not connected internally. (***) DNC is a no user connection pin.
2.7 Gb/s Laser Diode Driver
Test Circuits (1) DC Characteristics
F0522501Q
Multimeter
2200p
VSS 2200p 0.022
A
0.022 0.022
A
0.022
DISIN DINB VBIN MRK VSS MRKB VMIN DNC OUTB VSS OUT OUTBIAS BM VDDC VSS VDDO BMB
DC Source/ Monitor Unit A
VTTD DIN VSS CKIN VTTCK CKINB SELIN
DC Source/ Monitor Unit A
SUMITOMO ELECTRIC 0522501 ####
A
0.022
Multimeter
2.7 Gb/s Laser Diode Driver
(2) AC Characteristics
F0522501Q
VSS
Multimeter
2200p 0.022 2200p
A DC 0.022 0.022 Source/
VBIN MRKB
A
0.022
DISIN DINB VTTD MRK VSS
Monitor Unit
VMIN DNC OUTB 22 VSS OUT
SUMITOMO ELECTRIC 0522501 ####
Pulse Pattern Generator
DIN
A
VSS CKIN VTTCK CKINB SELIN
A
Sampling Oscilloscope
OUTBIAS BM VDDO BMB
22
VDDC
VSS
0.022
A
2.7 Gb/s Laser Diode Driver
Typical Characteristics (1) Modulation Current
Modulation Current vs Vin @ DIN
F0522501Q
Leak Current of Modulation
Modulation Current (mA) @OUT
Modulation Current (A) @OUT
100 80 60 40 Ta=25C 20 0 -2 -1.5 -1 -0.5 0
100 80 60 40 20 0 -50 0 50 100 VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V
Input Voltage (V) @ DIN
Ambient Operating Temperature (C)
Conditions VDD=GND, VSS=-5 V, VIN@DINB=-1.3 V VMIN@IMpeak=60 mA, VBIN=VSS VOUT@OUT, OUTB , OUTBIAS=GND
Conditions VDD=GND, VIN@DIN=-1.6 V, VIN@DINB=-1.3 V VMIN@IMpeak=60 mA, VBIN=VSS VOUT@OUT, OUTB , OUTBIAS=GND
Modulation Current (mA) @OUT
100 80 60 40 20 0 -5 -4.5 -4 -3.5 -3 Ta=-44C Ta=0C Ta=25C Ta=70C Ta=85C
Modulation Current (mA) @OUT
Modulation Current vs VMIN
Modulation Current vs VMIN
100 80 60 40 20 0 -5 -4.5 -4 -3.5 -3 Ta=-44C Ta=0C Ta=25C Ta=70C Ta=85C
Control Voltage (V) @ VMIN
Control Voltage (V) @ VMIN
Conditions VOUT@OUT=GND VDD= GND , VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VBIN=VSS VOUT@OUTB , OUTBIAS=GND
Conditions VOUT@OUT=-1.6 V VDD= GND, VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VBIN=VSS VOUT@OUTB , OUTBIAS=GND
2.7 Gb/s Laser Diode Driver
(2) Bias Current
Bias Current vs Vin @ DISIN
100 100
F0522501Q
Leak Current of Bias
Bias Current (mA)
Bias Current (A)
80 60 40 20 0 -5 -4 Ta=25C -3 -2 -1 0
80 60 40 20 0 -50
VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V
0
50
100
Input Voltage (V) @ DISIN
Ambient Operating Temperature (C)
Conditions VDD=GND, VSS=-5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VMIN=VSS VBIN@IB=60mA VOUT@OUT, OUTB , OUTBIAS=GND
Conditions VDD=GND, VIN@DIN=-1.0 V, VIN@DINB=-1.3 V VIN@DISIN=-1.5 V, VMIN=VSS VBIN@IB=60 mA VOUT@OUT, OUTB , OUTBIAS=GND
Bias Current vs VBIN
100 100
Bias Current vs VBIN
Bias Current (mA)
80 60 40 20 0 -5 -4.5 -4 Ta=-44C Ta=0C Ta=25C Ta=70C Ta=85C -3.5 -3
Bias Current (mA)
80 60 40 20 0 -5 -4.5 -4 Ta=-44C Ta=0C Ta=25C Ta=70C Ta=85C -3.5 -3
Control Voltage (V) @ VBIN
Control Voltage (V) @ VBIN
Conditions VOUT@OUTBIAS=GND VDD= GND , VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VMIN=VSS VOUT@OUT, OUTB =GND
Conditions VOUT@OUTBIAS =-1.6 V VDD= GND, VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VMIN=VSS VOUT@OUT, OUTB =GND
2.7 Gb/s Laser Diode Driver
(3) Circuit Current
F0522501Q
Circuit Current
130
Circuit Current (mA)
120 110 100 90 80 -50 0
VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V
50
100
Ambient Operating Temperature (C)
Conditions VDD=GND, VIN@DIN=-1.0V VIN@DINB=-1.3 V, VMIN=VSS , VBIN=VSS VOUT@OUT, OUTB , OUTBIAS =GND
(4) Signal Input Resistor and Bias Monitor Resistor
Signal Input Resistor
60 11
Bias Monitor Resistor
VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V 10
Resitance ()
55 50 45 40 -50 VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V 0 50 100
Resitance ()
9 -50
0
50
100
Ambient Operating Temperature (C)
Ambient Operating Temperature (C)
Conditions VDD =GND, VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3 V, VMIN=VSS , VBIN=VSS VOUT@OUT, OUTB , OUTBIAS =GND
Conditions VDD =GND, VSS= -5 V, VIN@DIN=-1.0 V VIN@DINB=-1.3V, VMIN=VSS , VBIN@IB=60 mA VOUT@OUT, OUTB , OUTBIAS =GND
2.7 Gb/s Laser Diode Driver
(5) Mark Density Monitor Voltage
F0522501Q
Monitor Output vs Mark Density
2.0 1.0 0.0 -1.0 -2.0
VMRK (V)
0
20
40
60
80
100
Mark Density (%)
Conditions (See test circuits for AC characteristics) VDD=GND, VSS=-5 V, @2.48832 Gb/s, PRBS223-1 VIN@DIN , DINB , CKIN , CKINB=-0.9 V/-1.7 V VMIN@IMpeak=60 mA, VBIN=VSS VOUT@OUTBIAS=GND, Ta=25 C
Monitor Output @ All"H"Data
2.0 0.0
Monitor Output @ All"L"Data
VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V
VMRK(V)
1.0 0.5 0.0 -50 VSS=-5.50V VSS=-5.25V VSS=-5.00V VSS=-4.75V 0 50 100
VMRK(V)
1.5
-0.5 -1.0 -1.5 -2.0 -50
0
50
100
Ambient Operating Temperature (C)
Ambient Operating Temperature (C)
Conditions VDD=GND, VIN@DIN=-1.0 V, VIN@DINB=-1.3 V VMIN@IMpeak=60 mA, VBIN=VSS VOUT@OUT, OUTB , OUTBIAS=GND
Conditions VDD=GND, VIN@DIN=-1.6 V, VIN@DINB=-1.3 V VMIN@IMpeak=60 mA, VBIN=VSS VOUT@OUT, OUTB , OUTBIAS=GND
2.7 Gb/s Laser Diode Driver
(6)-(a) Erectrical Output Waveform @Clocked Operation
F0522501Q
200 mV/div
100 ps/div Conditions Ta=25 C, VDD=GND, VSS=-5 V, DIN :VIL=-1.7V,VIH=-0.9V,DINB=-1.3V,@2.5 Gb/s, PRBS223-1 CKIN:VIL=-1.7V,VIH=-0.9V.CKINB=-1.3V,f=2.5GHz VM=-3.9V,VB=-5.0V,RL=15 ohms
200 mV/div
100 ps/div Conditions Ta=25 C, VDD=GND, VSS=-5 V, DIN :VIL=-1.7V,VIH=-0.9V,DINB=-1.3V,@2.5 Gb/s, PRBS223-1 CKIN:VIL=-1.7V,VIH=-0.9V.CKINB=-1.3V,f=2.7GHz VM=-3.9V,VB=-5.0V,RL=15 ohms
2.7 Gb/s Laser Diode Driver
(6)-(b) Erectrical Output Waveform @non-Clocked Operation
F0522501Q
Conditions Ta=25 C, VDD=GND, VSS=-5 V, DIN :VIL=-1.7V,VIH=-0.9V,DINB=-1.3V,@2.5 Gb/s, PRBS223-1 VM=-3.9V,VB=-5.0V,RL=15 ohms
Conditions Ta=25 C, VDD=GND, VSS=-5 V, DIN :VIL=-1.7V,VIH=-0.9V,DINB=-1.3V,@2.5 Gb/s, PRBS223-1 VM=-3.9V,VB=-5.0V,RL=15 ohms
2.7 Gb/s Laser Diode Driver
(7)-(a) Optical Output Waveform @2.48832Gb/s (1310nm FP-LD)
F0522501Q
Conditions Ta=25 C, VDD=GND, VSS=-5 V, @2.48832 Gb/s, PRBS223-1 VIN@DIN , DINB , CKIN , CKINB=0.8Vp-p (AC coupled)
Conditions Ta=25 C, VDD=GND, VSS=-5 V, @2.48832 Gb/s, PRBS223-1 VIN@DIN , DINB , CKIN , CKINB=0.8Vp-p (AC coupled) with fourth order Bessel-Thompson filter
2.7 Gb/s Laser Diode Driver
(7)-(b) Optical Output Waveform @2.48832Gb/s (1310nm DFB-LD)
F0522501Q
Conditions Ta=25 C, VDD=GND, VSS=-5 V, @2.48832 Gb/s, PRBS223-1 VIN@DIN , DINB , CKIN , CKINB=0.8 Vp-p (AC coupled)
Conditions Ta=25 C, VDD=GND, VSS=-5 V, @2.48832 Gb/s, PRBS223-1 VIN@DIN , DINB , CKIN , CKINB=0.8 Vp-p (AC coupled) with fourth order Bessel-Thompson filter
2.7 Gb/s Laser Diode Driver
Test Circuit
F0522501Q
Pulse Pattern Generator
F0522501Q
Laser Diode*)
Optical Sampling Waveform Oscillo -scope Fiber Monitor
*) 1310nm DFB-LD:SLT4200Series (Sumitomo Electric Industries, LTD.) 1310nm FP-LD:SLT4100Series (Sumitomo Electric Industries, LTD.)
Application Guide
(1) Data and Clock Input Interface (a) Differential ECL (or PECL) Interface
Buffer-IC
DINB
Data
VDD-2V
VTTD DIN
RIN RIN
10k typ.
Vref
10k typ.
F0522501Q
CKIN RIN RIN 10k typ.
Clock
VDD-2V
VTTD CKINB
Vref
10k typ.
*) RIN=50 typ., Vref=VDD-1.4 V typ.
2.7 Gb/s Laser Diode Driver
(b) Differential AC Coupled Interface
F0522501Q
Buffer-IC 0.022 D INB Data 0.022 V TTD
DIN RIN RIN 10k typ.
Vref
10k typ.
0.022
F0522501Q
100p CK IN Clock 100p V TTD
CKINB RIN RIN 10k typ.
Vref
10k typ.
100p
*) RIN=50 typ., Vref=VDD-1.4 V typ.
(c) Single-Ended AC Coupled Interface
50 0.022 DINB Buffer-IC Data 0.022 0.022 V TTD
DIN RIN RIN 10k typ.
Vref
10k typ.
F0522501Q
Clock 100p CK IN 100p V TTD
CKINB RIN RIN 10k typ.
Vref
10k typ.
50 100p
*) RIN=50 typ., Vref=VDD-1.4 V typ.
2.7 Gb/s Laser Diode Driver
(2) Disable Input and Selector Input Interface
F0522501Q
CMOS-IC Disable
DISIN 8k typ.
VDD
15k typ. 6.5k typ.
VSS
F0522501Q
VDD Selector
SELIN 8k typ. 15k typ. 6.5k typ.
VSS
(3) Current Output Interface VDD
OUTB
15 typ.
Laser Diode
or
OUT
F0522501Q
OUTBIAS
10 typ. 3k typ. 3k typ.
or
BMB BM
2.7 Gb/s Laser Diode Driver
(4) Bias Current Monitor and Mark Density Monitor Interface
F0522501Q
MRK
25k typ. R1 R1 R2
R2
-
Op. Amp
MRKB
25k typ.
+
F0522501Q
OUTBIAS
10 typ. 3k typ. 3k typ.
Vref1
R4
BM
R3
-
Op. Amp
BMB
R3 R4
+
*) Voltage of MRK and MRKB is VDD-1.8V typ. Vref2 @50% Mark Density. **) Value of R1 to R4 should be enough larger than 25. Recommended value is 100k to 200k.
2.7 Gb/s Laser Diode Driver
(5) Timing Chart
F0522501Q
VIH CKIN VIL VIH DIN VIL IMON Current @OUT IMOFF IMON Current @OUTB IMOFF
ts
th
2.7 Gb/s Laser Diode Driver
Package Drawings
F0522501Q
0.7 typ.
0.7 typ.
SUMITOMO ELECTRIC 0522501 ####
7.00.2
9.00.3
7.00.2
1.450.1
0.50.2
9.00.3 0.15 -0.05
+0.1
0.100.05
Dimension:millimeters
0.8
0.30.1
2.7 Gb/s Laser Diode Driver
APC (Auto Power Control) Sample Circuit
F0522501Q
Vcc
LD Module
LD Monitor PIN-PD
or R16 OUT
F0522501Q
C1 OUTBIAS VB R13 C3 R11 or
Vreg
C2 R3 R2
Op.Amp.
R5 R4
Op.Amp.
R1
Op.Amp.
VB
VM
R6 R9
RT R12 R10 R7 R8
RT:thermister
Electron Device Department


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